? 2011 ixys corporation, all rights reserved ds100310(03/11) ixft50n60p3 ixfq50n60p3 IXFH50N60P3 polar3 tm hiperfet tm power mosfet n-channel enhancement mode avalanche rated fast intrinsic rectifier symbol test conditions maximum ratings v dss t j = 25 c to 150 c 600 v v dgr t j = 25 c to 150 c, r gs = 1m 600 v v gss continuous 30 v v gsm transient 40 v i d25 t c = 25 c 50 a i dm t c = 25 c, pulse width limited by t jm 125 a i a t c = 25 c25 a e as t c = 25 c1 j dv/dt i s i dm , v dd v dss , t j 150c 35 v/ns p d t c = 25 c 1040 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6mm (0.062in.) from case for 10s 300 c t sold plastic body for 10 seconds 260 c m d mounting torque (to-247 & to-3p) 1.13 / 10 nm/lb.in. weight to-268 4.0 g to-3p 5.5 g to-247 6.0 g v dss = 600v i d25 = 50a r ds(on) 145m advance technical information features z fast intrinsic rectifier z avalanche rated z low r ds(on) and q g z low package inductance advantages z high power density z easy to mount z space savings applications z switch-mode and resonant-mode power supplies z dc-dc converters z laser drivers z ac and dc motor drives z robotics and servo controls symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = 1ma 600 v v gs(th) v ds = v gs , i d = 4ma 3.0 5.0 v i gss v gs = 30v, v ds = 0v 100 na i dss v ds = v dss , v gs = 0v 25 a t j = 125 c 2 ma r ds(on) v gs = 10v, i d = 0.5 ? i d25 , note 1 145 m g = gate d = drain s = source tab = drain to-247 (ixfh) g s d (tab) d to-268 (ixft) s g d (tab) to-3p (ixfq) d g s d (tab) www..net
ixys reserves the right to change limits, test conditions, and dimensions. ixft50n60p3 ixfq50n60p3 IXFH50N60P3 ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 note 1. pulse test, t 300 s, duty cycle, d 2%. symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. g fs v ds = 20v, i d = 0.5 ? i d25 , note 1 32 55 s c iss 6300 pf c oss v gs = 0v, v ds = 25v, f = 1mhz 630 pf c rss 2.5 pf r gi gate input resistance 1.0 t d(on) 31 ns t r 20 ns t d(off) 62 ns t f 17 ns q g(on) 94 nc q gs v gs = 10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 27 nc q gd 23 nc r thjc 0.12 c/w r thcs (to-247 & to-3p) 0.25 c/w source-drain diode symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. i s v gs = 0v 50 a i sm repetitive, pulse width limited by t jm 200 a v sd i f = i s , v gs = 0v, note 1 1.4 v t rr 250 ns i rm 11 a q rm 1.1 c i f = 25a, -di/dt = 100a/ s v r = 100v, v gs = 0v resistive switching times v gs = 10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 r g = 1 (external) advance technical information the product presented herein is under development. the technical specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. ixys reserves the right to change limits, test conditions, and dimensions without notice. to-263 outline to-3p outline e ? p to-247 outline 1 2 3 terminals: 1 - gate 2 - drain 3 - source dim. millimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 s 6.15 bsc 242 bsc www..net
? 2011 ixys corporation, all rights reserved ixft50n60p3 ixfq50n60p3 IXFH50N60P3 fig. 1. output characteristics @ t j = 25oc 0 5 10 15 20 25 30 35 40 45 50 01234567 v ds - volts i d - amperes v gs = 10v 7v 5 v 6 v fig. 2. extended output characteristics @ t j = 25oc 0 10 20 30 40 50 60 70 80 90 100 0 5 10 15 20 25 30 v ds - volts i d - amperes v gs = 10v 8v 6 v 5 v 7 v fig. 3. output characteristics @ t j = 125oc 0 5 10 15 20 25 30 35 40 45 50 024681012141618 v ds - volts i d - amperes 5 v 6v 4v v gs = 10v 7v fig. 4. r ds(on) normalized to i d = 25a value vs. junction temperature 0.2 0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d = 50a i d = 25a fig. 5. r ds(on) normalized to i d = 25a value vs. drain current 0.6 1.0 1.4 1.8 2.2 2.6 3.0 0 102030405060708090100 i d - amperes r ds(on) - normalized v gs = 10v t j = 125oc t j = 25oc fig. 6. maximum drain current vs. case temperature 0 10 20 30 40 50 60 -50-25 0 255075100125150 t c - degrees centigrade i d - amperes www..net
ixys reserves the right to change limits, test conditions, and dimensions. ixft50n60p3 ixfq50n60p3 IXFH50N60P3 fig. 7. input admittance 0 10 20 30 40 50 60 70 80 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 v gs - volts i d - amperes t j = 125oc 25oc - 40oc fig. 8. transconductance 0 20 40 60 80 100 120 0 1020304050607080 i d - amperes g f s - siemens t j = - 40oc 125oc 25oc fig. 9. forward voltage drop of intrinsic diode 0 20 40 60 80 100 120 140 0.30.40.50.60.70.80.91.01.11.2 v sd - volts i s - amperes t j = 125oc t j = 25oc fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 102030405060708090100 q g - nanocoulombs v gs - volts v ds = 300v i d = 25a i g = 10ma fig. 11. capacitance 1 10 100 1,000 10,000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarads f = 1 mhz c iss c rss c oss fig. 12. forward-bias safe operating area 1 10 100 1000 10 100 1,000 v ds - volts i d - amperes t j = 150oc t c = 25oc single pulse 100s 1ms r ds(on) limit www..net
? 2011 ixys corporation, all rights reserved ixft50n60p3 ixfq50n60p3 IXFH50N60P3 ixys ref: f_50n60p3(w8)03-10-11 fig. 13. maximum transient thermal impedance 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w fig. 13. maximum transient thermal impedance aaaaa 0.2 www..net
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